PMV65XPEAR Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:78 mOhm @ 2.8A, 4.5V
• Vgs(th) (Max) @ Id:1.25V @ 250µA
• Power - Max:--

• Gate Charge (Qg) (Max) @ Vgs:9nC @ 4.5V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:618pF @ 10V
• FET Feature:--
• Power Dissipation (Max):480mW (Ta), 6.25W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-236AB (SOT23)
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Base Part Number:--