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RN1111MFV,L3F

Toshiba Semiconductor and Storage
RN1111MFV,L3F HongDa Electronics RN1111MFV,L3F
  • Manufacturer Part# RN1111MFV,L3F
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionX34 PB-F VESM PLN (LF) TRANSISTO
  • More DetailPre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
RN1111MFV,L3F Datasheet

Technical Details

  • Series:--
  • Part Status:Active
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V

 

  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Power - Max:150mW
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM

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