Name: RN1966FE(TE85L,F) Discrete Semiconductor Products
Brand: Toshiba Semiconductor and Storage
SKU: RN1966FE(TE85LF)TR-ND
Availability: InStock

RN1966FE(TE85L,F)

Manufacturer Part# RN1966FE(TE85L,F)
Product CategoryDiscrete Semiconductor Products
Short DescriptionTRANS 2NPN PREBIAS 0.1W ES6
More DetailPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...

In Stock: 4000

Can ship immediately

Datasheet:

RN1966FE(TE85L,F) Datasheet

Technical Details

Series:--
Packaging:Tape & Reel (TR)
Part Status:Obsolete
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6