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RN2101ACT(TPL3)

Toshiba Semiconductor and Storage
RN2101ACT(TPL3) HongDa Electronics RN2101ACT(TPL3)
  • Manufacturer Part# RN2101ACT(TPL3)
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS PNP 0.1W CST3
  • More DetailPre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
RN2101ACT(TPL3) Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Obsolete
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):80mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Power - Max:100mW
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:CST3

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