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1. DESCRIPTION
The SFH640-3 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling device is designed for signal transmission between two electrically separated circuits.
2. FEATURES
1. Phototransistor optocoupler in a 6 pin DIP package with base connection
2. Very high collector emitter breakdown voltage, BVCEO = 300 V
3. Isolation rated voltage: 5000 VRMS
4. Low coupling capacitance
5. High common m;ode transient immunity
3. APPLICATIONS
1. Telecom
2. Industrial controls
3. Battery powered equipment
4. Office machines
5. Programmable controllers
4. Package overview
5. Electrical characteristics
6. Package overview
