SI1021R-T1-E3 Vishay Siliconix | HongDa Electronics

SI1021R-T1-E3 HongDa Electronics

Manufacturer Part# SI1021R-T1-E3
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET P-CH 60V 190MA SC-75A
More DetailP-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount ...

In Stock: 1000

Can ship immediately

Datasheet:

SI1021R-T1-E3 Datasheet

Technical Details

Vgs(th) (Max) @ Id:3V @ 250µA
Package / Case:SC-75A
Supplier Device Package:SC-75A
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 150°C (TJ)
Power Dissipation (Max):250mW (Ta)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:23pF @ 25V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:1.7nC @ 15V

Series:TrenchFET®
Rds On (Max) @ Id, Vgs:4 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drain to Source Voltage (Vdss):60V
Technology:MOSFET (Metal Oxide)
FET Type:P-Channel
Part Status:Obsolete
Packaging:Tape & Reel (TR)

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