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SI4463CDY-T1-GE3

Vishay Siliconix
SI4463CDY-T1-GE3 HongDa Electronics SI4463CDY-T1-GE3
  • Manufacturer Part# SI4463CDY-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CHAN 2.5V SO8
  • More DetailP-Channel 20V 13.6A (Ta), 49A (Tc) 2.7W (Ta), 5W (...
In Stock: 1000

Can ship immediately

Datasheet:
SI4463CDY-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.7W (Ta), 5W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:4250pF @ 15V
  • Vgs (Max):±12V
  • Gate Charge (Qg) (Max) @ Vgs:162nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:8 mOhm @ 13A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:13.6A (Ta), 49A (Tc)
  • Drain to Source Voltage (Vdss):20V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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