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SI8409DB-T1-E1

Vishay Siliconix
SI8409DB-T1-E1 HongDa Electronics SI8409DB-T1-E1
  • Manufacturer Part# SI8409DB-T1-E1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 30V 4.6A 2X2 4-MFP
  • More DetailP-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4...
In Stock: 15000

Can ship immediately

Datasheet:
SI8409DB-T1-E1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Package / Case:4-XFBGA, CSPBGA
  • Supplier Device Package:4-Microfoot
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1.47W (Ta)
  • FET Feature:--
  • Vgs (Max):±12V
  • Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V
  • Series:TrenchFET®

 

  • Rds On (Max) @ Id, Vgs:46 mOhm @ 1A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:4.6A (Ta)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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