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SI8469DB-T2-E1

Vishay Siliconix
SI8469DB-T2-E1 HongDa Electronics SI8469DB-T2-E1
  • Manufacturer Part# SI8469DB-T2-E1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 8V 3.6A MICRO
  • More DetailP-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surfa...
In Stock: 1000

Can ship immediately

Datasheet:
SI8469DB-T2-E1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:800mV @ 250µA
  • Package / Case:4-UFBGA
  • Supplier Device Package:4-Microfoot
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):780mW (Ta), 1.8W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:900pF @ 4V
  • Vgs (Max):±5V
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:64 mOhm @ 1.5A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V
  • Current - Continuous Drain (Id) @ 25°C:4.6A (Ta)
  • Drain to Source Voltage (Vdss):8V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Last Time Buy
  • Packaging:Tape & Reel (TR) 

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