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SI8481DB-T1-E1

Vishay Siliconix
SI8481DB-T1-E1 HongDa Electronics SI8481DB-T1-E1
  • Manufacturer Part# SI8481DB-T1-E1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 20V 9.7A 4-MICROFOOT
  • More DetailP-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-...
In Stock: 1000

Can ship immediately

Datasheet:
SI8481DB-T1-E1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Package / Case:4-UFBGA
  • Supplier Device Package:4-MICRO FOOT® (1.6x1.6)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.8W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2500pF @ 10V
  • Vgs (Max):±8V
  • Gate Charge (Qg) (Max) @ Vgs:47nC @ 4.5V

 

  • Series:TrenchFET® Gen III
  • Rds On (Max) @ Id, Vgs:21 mOhm @ 3A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:9.7A (Tc)
  • Drain to Source Voltage (Vdss):20V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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