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SI8819EDB-T2-E1

Vishay Siliconix
SI8819EDB-T2-E1 HongDa Electronics SI8819EDB-T2-E1
  • Manufacturer Part# SI8819EDB-T2-E1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 12V 2.9A 4-MICROFOOT
  • More DetailP-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4...
In Stock: 1000

Can ship immediately

Datasheet:
SI8819EDB-T2-E1 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 8V
  • Package / Case:4-XFBGA
  • Supplier Device Package:4-MICRO FOOT® (0.8x0.8)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):900mW (Ta)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:650pF @ 6V
  • Vgs (Max):±8V
  • Series:--

 

  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Rds On (Max) @ Id, Vgs:80 mOhm @ 1.5A, 3.7V
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 3.7V
  • Current - Continuous Drain (Id) @ 25°C:2.9A (Ta)
  • Drain to Source Voltage (Vdss):12V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active

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