SMUN5235DW1T3G ON Semiconductor | HongDa Electronics

SMUN5235DW1T3G HongDa Electronics

Manufacturer Part# SMUN5235DW1T3G
Product CategoryDiscrete Semiconductor Products
Short DescriptionTRANS 2NPN PREBIAS 0.187W SOT363
More DetailPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...

In Stock: 1000

Can ship immediately

Datasheet:

SMUN5235DW1T3G Datasheet

Technical Details

Series:--
Packaging:Tape & Reel (TR)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:--
Power - Max:187mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363

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