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STF11N60M2-EP

STMicroelectronics
STF11N60M2-EP HongDa Electronics STF11N60M2-EP
  • Manufacturer Part# STF11N60M2-EP
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 7.5A TO220FP
  • More DetailN-Channel 600V 7.5A (Tc) 25W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
STF11N60M2-EP Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:12.4nC @ 10V
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FP
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):25W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:390pF @ 100V
  • Vgs (Max):±25V
  • Series:MDmesh™ M2-EP

 

  • Vgs(th) (Max) @ Id:4.75V @ 250µA
  • Rds On (Max) @ Id, Vgs:595 mOhm @ 3.75A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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