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STW18N65M5

STMicroelectronics
STW18N65M5 HongDa Electronics STW18N65M5
  • Manufacturer Part# STW18N65M5
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N CH 650V 15A TO-247
  • More DetailN-Channel 650V 15A (Tc) 110W (Tc) Through Hole TO-...
In Stock: 568

Can ship immediately

Datasheet:
STW18N65M5 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):110W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1240pF @ 100V
  • Vgs (Max):±25V
  • Gate Charge (Qg) (Max) @ Vgs:31nC @ 10V

 

  • Series:MDmesh™ V
  • Rds On (Max) @ Id, Vgs:220 mOhm @ 7.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:15A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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