TK8Q65W,S1Q

Technical Details

• Vgs(th) (Max) @ Id:3.5V @ 300µA
• Package / Case:TO-251-3 Stub Leads, IPak
• Supplier Device Package:I-PAK
• Mounting Type:Through Hole
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):80W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:570pF @ 300V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V

• Series:DTMOSIV
• Rds On (Max) @ Id, Vgs:670 mOhm @ 3.9A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:7.8A (Ta)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube