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VS-GB100TP120N

Vishay Semiconductor Diodes Division
VS-GB100TP120N HongDa Electronics VS-GB100TP120N
  • Manufacturer Part# VS-GB100TP120N
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionIGBT 1200V 200A 650W INT-A-PAK
  • More DetailIGBT Module Half Bridge 1200V 200A 650W Chassis M...
In Stock: 1000

Can ship immediately

Datasheet:
VS-GB100TP120N Datasheet

Technical Details

  • Series:--
  • Part Status:Active
  • IGBT Type:--
  • Configuration:Half Bridge
  • Voltage - Collector Emitter Breakdown (Max):1200V
  • Current - Collector (Ic) (Max):200A
  • Power - Max:650W
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 100A
  • Current - Collector Cutoff (Max):5mA

 

  • Input Capacitance (Cies) @ Vce:7.43nF @ 25V
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:INT-A-Pak
  • Supplier Device Package:INT-A-PAK

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