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VS-GT100TP120N

Vishay Semiconductor Diodes Division
VS-GT100TP120N HongDa Electronics VS-GT100TP120N
  • Manufacturer Part# VS-GT100TP120N
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionIGBT 1200V 180A 652W INT-A-PAK
  • More DetailIGBT Module Trench Half Bridge 1200V 180A 652W Cha...
In Stock: 1000

Can ship immediately

Datasheet:
VS-GT100TP120N Datasheet

Technical Details

  • Series:--
  • Part Status:Obsolete
  • IGBT Type:Trench
  • Configuration:Half Bridge
  • Voltage - Collector Emitter Breakdown (Max):1200V
  • Current - Collector (Ic) (Max):180A
  • Power - Max:652W
  • Vce(on) (Max) @ Vge, Ic:2.35V @ 15V, 100A
  • Current - Collector Cutoff (Max):5mA

 

  • Input Capacitance (Cies) @ Vce:12.8nF @ 30V
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:INT-A-PAK (3 + 4)
  • Supplier Device Package:INT-A-PAK

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