19MT050XF

Technical Details

• Series:HEXFET®
• Packaging:Bulk 
• Part Status:Obsolete
• FET Type:4 N-Channel (H-Bridge)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):500V
• Current - Continuous Drain (Id) @ 25°C:31A
• Rds On (Max) @ Id, Vgs:220 mOhm @ 19A, 10V
• Vgs(th) (Max) @ Id:6V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:7210pF @ 25V
• Power - Max:1140W
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:16-MTP Module
• Supplier Device Package:16-MTP