1HN04CH-TL-W Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.6V @ 100µA
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:3-CPH
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):--
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:15pF @ 20V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:0.9nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:8 Ohm @ 140mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)