• Manufacturer Part# 1N8026-GA
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionDIODE SILICON 1.2KV 8A TO257
  • More DetailDiode Silicon Carbide Schottky 1200V 8A (DC) Throu...
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Datasheet:

Technical Details

  • Series:--
  • Packaging:Tube 
  • Part Status:Active
  • Diode Type:Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max):1200V
  • Current - Average Rectified (Io):8A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.6V @ 2.5A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0ns

 

  • Current - Reverse Leakage @ Vr:10µA @ 1200V
  • Capacitance @ Vr, F:237pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-257-3
  • Supplier Device Package:TO-257
  • Operating Temperature - Junction:-55°C ~ 250°C
  • Base Part Number:1N8026

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