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2N2432UB

Microsemi Corporation
2N2432UB HongDa Electronics 2N2432UB
  • Manufacturer Part# 2N2432UB
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionBJTS
  • More DetailBipolar (BJT) Transistor NPN 30V 100mA 360mW Surf...
In Stock: 1000

Can ship immediately

Datasheet:
2N2432UB Datasheet

Technical Details

  • Series:--
  • Part Status:Active
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):30V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 1mA, 5V

 

  • Power - Max:360mW
  • Frequency - Transition:--
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB

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