2N2907AE4 Microsemi Corporation | HongDa Electronics

2N2907AE4 HongDa Electronics

Manufacturer Part# 2N2907AE4
Product CategoryDiscrete Semiconductor Products
Short DescriptionDIE TRANS PNP MED PWR GEN PURP T
More DetailBipolar (BJT) Transistor PNP 60V 600mA 500mW Thro...

In Stock: 1000

Can ship immediately

Datasheet:

2N2907AE4 Datasheet

Technical Details

Series:--
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):600mA
Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V

Power - Max:500mW
Frequency - Transition:--
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-206AA, TO-18-3 Metal Can
Supplier Device Package:TO-18

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