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2N3019S

Microsemi Corporation
2N3019S HongDa Electronics 2N3019S
  • Manufacturer Part# 2N3019S
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 80V 1A TO-39
  • More DetailBipolar (BJT) Transistor NPN 80V 1A 800mW Through...
In Stock: 1000

Can ship immediately

Datasheet:
2N3019S Datasheet

Technical Details

  • Series:--
  • Packaging:Bulk 
  • Part Status:Active
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1A
  • Voltage - Collector Emitter Breakdown (Max):80V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10nA

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 500mA, 10V
  • Power - Max:800mW
  • Frequency - Transition:--
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39 (TO-205AD)

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