2N3251A Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Bulk 
• Part Status:Active
• Transistor Type:PNP
• Current - Collector (Ic) (Max):200mA
• Voltage - Collector Emitter Breakdown (Max):60V
• Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max):10µA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
• Power - Max:360mW
• Frequency - Transition:--
• Operating Temperature:-65°C ~ 200°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-205AD, TO-39-3 Metal Can
• Supplier Device Package:TO-39 (TO-205AD)