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2N3501UB

Microsemi Corporation
2N3501UB HongDa Electronics 2N3501UB
  • Manufacturer Part# 2N3501UB
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 150V 0.3A
  • More DetailBipolar (BJT) Transistor NPN 150V 300mA 500mW Sur...
In Stock: 1000

Can ship immediately

Datasheet:
2N3501UB Datasheet

Technical Details

  • Series:Military, MIL-PRF-19500/366
  • Packaging:Bulk 
  • Part Status:Active
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):300mA
  • Voltage - Collector Emitter Breakdown (Max):150V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max):10µA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:500mW
  • Frequency - Transition:--
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB

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