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2N6660-E3

Vishay Siliconix
2N6660-E3 HongDa Electronics 2N6660-E3
  • Manufacturer Part# 2N6660-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 990MA TO-205
  • More DetailN-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Th...
In Stock: 1000

Can ship immediately

Datasheet:
2N6660-E3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-205AD (TO-39)
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):725mW (Ta), 6.25W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
  • Vgs (Max):±20V
  • Series:--

 

  • Rds On (Max) @ Id, Vgs:3 Ohm @ 1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:990mA (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Bulk 

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