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2N7002E-T1-GE3

Vishay Siliconix
2N7002E-T1-GE3 HongDa Electronics 2N7002E-T1-GE3
  • Manufacturer Part# 2N7002E-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 240MA SOT23
  • More DetailN-Channel 60V 240mA (Ta) 350mW (Ta) Surface Mount ...
In Stock: 15000

Can ship immediately

Datasheet:
2N7002E-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):350mW (Ta)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:21pF @ 5V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:0.6nC @ 4.5V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:3 Ohm @ 250mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:240mA (Ta)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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