2N7635-GA

Technical Details

• Vgs(th) (Max) @ Id:--
• Package / Case:TO-257-3
• Supplier Device Package:TO-257
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 225°C (TJ)
• Power Dissipation (Max):47W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:324pF @ 35V
• Vgs (Max):--
• Series:--

• Rds On (Max) @ Id, Vgs:415 mOhm @ 4A
• Drive Voltage (Max Rds On, Min Rds On):--
• Current - Continuous Drain (Id) @ 25°C:4A (Tc) (165°C)
• Drain to Source Voltage (Vdss):650V
• Technology:SiC (Silicon Carbide Junction Transistor)
• FET Type:--
• Part Status:Obsolete
• Packaging:Bulk