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2SB906-Y(TE16L1,NQ

Toshiba Semiconductor and Storage
2SB906-Y(TE16L1,NQ HongDa Electronics 2SB906-Y(TE16L1,NQ
  • Manufacturer Part# 2SB906-Y(TE16L1,NQ
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PNP 60V 3A PW-MOLD
  • More DetailBipolar (BJT) Transistor PNP 60V 3A 9MHz 1W Surfac...
In Stock: 1000

Can ship immediately

Datasheet:
2SB906-Y(TE16L1,NQ Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3A
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:1.7V @ 300mA, 3A
  • Current - Collector Cutoff (Max):100µA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 5V
  • Power - Max:1W
  • Frequency - Transition:9MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:PW-MOLD

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