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2SJ304(F)

Toshiba Semiconductor and Storage
2SJ304(F) HongDa Electronics 2SJ304(F)
  • Manufacturer Part# 2SJ304(F)
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 60V 14A TO220NIS
  • More DetailP-Channel 60V 14A (Ta) 40W (Tc) Through Hole TO-22...
In Stock: 1000

Can ship immediately

Datasheet:
2SJ304(F) Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):40W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1200pF @ 10V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:120 mOhm @ 7A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Current - Continuous Drain (Id) @ 25°C:14A (Ta)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Obsolete
  • Packaging:Bulk 

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