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2SJ649-AZ

Renesas Electronics America
2SJ649-AZ HongDa Electronics 2SJ649-AZ
  • Manufacturer Part# 2SJ649-AZ
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 60V 20A TO-220
  • More DetailP-Channel 60V 20A (Tc) 2W (Ta), 25W (Tc) Through H...
In Stock: 1783

Can ship immediately

Datasheet:
2SJ649-AZ Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:--
  • Package / Case:TO-220-3 Isolated Tab
  • Supplier Device Package:TO-220 Isolated Tab
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):2W (Ta), 25W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1900pF @ 10V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:48 mOhm @ 10A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Bulk 

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