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2SK4150TZ-E

Renesas Electronics America
2SK4150TZ-E HongDa Electronics 2SK4150TZ-E
  • Manufacturer Part# 2SK4150TZ-E
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 250V 0.4A TO-92
  • More DetailN-Channel 250V 400mA (Ta) 750mW (Ta) Through Hole ...
In Stock: 1000

Can ship immediately

Datasheet:
2SK4150TZ-E Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:--
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package:TO-92
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):750mW (Ta)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:80pF @ 25V
  • Vgs (Max):±10V
  • Gate Charge (Qg) (Max) @ Vgs:3.7nC @ 4V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:5.7 Ohm @ 200mA, 4V
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
  • Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
  • Drain to Source Voltage (Vdss):250V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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