2SK536-TB-E

Technical Details

• Vgs(th) (Max) @ Id:--
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SC-59
• Mounting Type:Surface Mount
• Operating Temperature:125°C (TJ)
• Power Dissipation (Max):200mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:15pF @ 10V
• Vgs (Max):±12V
• Series:--

• Rds On (Max) @ Id, Vgs:20 Ohm @ 10mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
• Drain to Source Voltage (Vdss):50V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)