3LN01C-TB-H

Technical Details

• Vgs(th) (Max) @ Id:--
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:3-CP
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):250mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:7pF @ 10V
• Vgs (Max):±10V
• Gate Charge (Qg) (Max) @ Vgs:1.58nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:3.7 Ohm @ 80mA, 4V
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
• Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)