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A2G35S200-01SR3

NXP USA Inc
A2G35S200-01SR3 HongDa Electronics A2G35S200-01SR3
  • Manufacturer Part# A2G35S200-01SR3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionAIRFAST RF POWER GAN TRANSISTOR
  • More DetailRF Mosfet LDMOS 48V 291mA 3.4GHz ~ 3.6GHz 16.1dB 1...
In Stock: 1000

Can ship immediately

Datasheet:
A2G35S200-01SR3 Datasheet

Technical Details

  • Series:--
  • Part Status:Active
  • Transistor Type:LDMOS
  • Frequency:3.4GHz ~ 3.6GHz
  • Gain:16.1dB
  • Voltage - Test:48V
  • Current Rating:--

 

  • Noise Figure:--
  • Current - Test:291mA
  • Power - Output:180W
  • Voltage - Rated:125V
  • Package / Case:NI-400S-2S
  • Supplier Device Package:NI-400S-2S

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