AOE6930

Technical Details

• Series:AlphaMOS
• Part Status:Active
• FET Type:2 N-Channel (Dual) Asymmetrical
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:22A (Tc), 85A (Tc)
• Rds On (Max) @ Id, Vgs:4.3 mOhm @ 20A, 10V, 0.83 mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 250µA, 1.9V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V, 65nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:1075pF @ 15V, 5560pF @ 15V
• Power - Max:24W, 75W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-VDFN Exposed Pad
• Supplier Device Package:8-DFN (5x6)