AOI518_001

Technical Details

• Vgs(th) (Max) @ Id:2.6V @ 250µA
• Package / Case:--
• Supplier Device Package:--
• Mounting Type:--
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):2.5W (Ta), 50W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:951pF @ 15V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:22.5nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:8 mOhm @ 20A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:18A (Ta), 46A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Bulk