AON5816

Technical Details

• Series:--
• Part Status:Active
• FET Type:2 N-Channel (Dual) Common Drain
• FET Feature:Standard
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:12A (Ta)
• Rds On (Max) @ Id, Vgs:6.5 mOhm @ 12A, 4.5V
• Vgs(th) (Max) @ Id:1.3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:2170pF @ 10V
• Power - Max:1.7W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-SMD, Flat Lead Exposed Pad
• Supplier Device Package:6-DFN-EP (2x5)