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AOT11S65L

Alpha & Omega Semiconductor Inc.
AOT11S65L HongDa Electronics AOT11S65L
  • Manufacturer Part# AOT11S65L
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 11A TO220
  • More DetailN-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
AOT11S65L Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):198W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:646pF @ 100V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:13.2nC @ 10V

 

  • Series:aMOS™
  • Rds On (Max) @ Id, Vgs:399 mOhm @ 5.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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