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APT70GR65B2SCD30

Microsemi Corporation
APT70GR65B2SCD30 HongDa Electronics APT70GR65B2SCD30
  • Manufacturer Part# APT70GR65B2SCD30
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionINSULATED GATE BIPOLAR TRANSISTO
  • More DetailIGBT NPT 650V 134A 595W Through Hole T-MAX™ [B2]
In Stock: 1000

Can ship immediately

Datasheet:
APT70GR65B2SCD30 Datasheet

Technical Details

  • Series:*
  • Packaging:Bulk 
  • Part Status:Obsolete
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):650V
  • Current - Collector (Ic) (Max):134A
  • Current - Collector Pulsed (Icm):260A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 70A
  • Power - Max:595W

 

  • Gate Charge:305nC
  • Td (on/off) @ 25°C:19ns/170ns
  • Test Condition:433V, 70A, 4.3 Ohm, 15V
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:T-MAX™ [B2]

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