APT9M100B

Technical Details

• Vgs(th) (Max) @ Id:5V @ 1mA
• Package / Case:TO-247-3
• Supplier Device Package:TO-247 [B]
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):335W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2605pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:80nC @ 10V

• Series:POWER MOS 8™
• Rds On (Max) @ Id, Vgs:1.4 Ohm @ 5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:9A (Tc)
• Drain to Source Voltage (Vdss):1000V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube