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BCR35PNE6327BTSA1

Infineon Technologies
BCR35PNE6327BTSA1 HongDa Electronics BCR35PNE6327BTSA1
  • Manufacturer Part# BCR35PNE6327BTSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN/PNP PREBIAS SOT363
  • More DetailPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
In Stock: 1000

Can ship immediately

Datasheet:
BCR35PNE6327BTSA1 Datasheet

Technical Details

  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • Base Part Number:BCR35PN
  • Supplier Device Package:PG-SOT363-6
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Mounting Type:Surface Mount
  • Power - Max:250mW
  • Frequency - Transition:150MHz
  • Current - Collector Cutoff (Max):--
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA

 

  • Series:--
  • Resistor - Emitter Base (R2):47 kOhms
  • Resistor - Base (R1):10 kOhms
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Current - Collector (Ic) (Max):100mA
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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