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BCR553E6327HTSA1

Infineon Technologies
BCR553E6327HTSA1 HongDa Electronics BCR553E6327HTSA1
  • Manufacturer Part# BCR553E6327HTSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS PNP 300MW SOT23-3
  • More DetailPre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
BCR553E6327HTSA1 Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Last Time Buy
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):500mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 50mA, 5V

 

  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150MHz
  • Power - Max:330mW
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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