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BDT61B-S

Bourns Inc.
BDT61B-S HongDa Electronics BDT61B-S
  • Manufacturer Part# BDT61B-S
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN DARL 100V 4A
  • More DetailBipolar (BJT) Transistor NPN - Darlington 100V 4A ...
In Stock: 1000

Can ship immediately

Datasheet:
BDT61B-S Datasheet

Technical Details

  • Series:--
  • Packaging:Tube 
  • Part Status:Obsolete
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):4A
  • Voltage - Collector Emitter Breakdown (Max):100V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 6mA, 1.5A
  • Current - Collector Cutoff (Max):500µA

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
  • Power - Max:2W
  • Frequency - Transition:--
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220

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