BFU660F,115 Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:NPN
• Voltage - Collector Emitter Breakdown (Max):5.5V
• Frequency - Transition:21GHz
• Noise Figure (dB Typ @ f):0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
• Gain:12dB ~ 21dB
• Power - Max:225mW

• DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 10mA, 2V
• Current - Collector (Ic) (Max):60mA
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-343F
• Supplier Device Package:4-DFP
• Base Part Number:BFU660