BFY90 Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Bulk 
• Part Status:Active
• Transistor Type:NPN
• Voltage - Collector Emitter Breakdown (Max):15V
• Frequency - Transition:1.4GHz
• Noise Figure (dB Typ @ f):5.5dB @ 800MHz
• Gain:23dB

• Power - Max:200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 25mA, 1V
• Current - Collector (Ic) (Max):25mA
• Operating Temperature:-65°C ~ 200°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-206AF, TO-72-4 Metal Can
• Supplier Device Package:TO-72