BS108ZL1G Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1.5V @ 1mA
• Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package:TO-92-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):350mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:150pF @ 25V
• Vgs (Max):±20V
• Series:--

• Rds On (Max) @ Id, Vgs:8 Ohm @ 100mA, 2.8V
• Drive Voltage (Max Rds On, Min Rds On):2V, 2.8V
• Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
• Drain to Source Voltage (Vdss):200V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Box (TB)