BSB015N04NX3GXUMA1 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:3-WDSON
• Supplier Device Package:MG-WDSON-2, CanPAK M™
• Mounting Type:Surface Mount
• Operating Temperature:-40°C ~ 150°C (TJ)
• Power Dissipation (Max):2.8W (Ta), 89W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:12000pF @ 20V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:142nC @ 10V

• Series:OptiMOS™
• Rds On (Max) @ Id, Vgs:1.5 mOhm @ 30A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:36A (Ta), 180A (Tc)
• Drain to Source Voltage (Vdss):40V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)