BSB104N08NP3GXUSA1

Technical Details

• Vgs(th) (Max) @ Id:3.5V @ 40µA
• Package / Case:3-WDSON
• Supplier Device Package:MG-WDSON-2, CanPAK M™
• Mounting Type:Surface Mount
• Operating Temperature:-40°C ~ 150°C (TJ)
• Power Dissipation (Max):2.8W (Ta), 42W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2100pF @ 40V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:31nC @ 10V

• Series:OptiMOS™
• Rds On (Max) @ Id, Vgs:10.4 mOhm @ 10A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:13A (Ta), 50A (Tc)
• Drain to Source Voltage (Vdss):80V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)