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BSC077N12NS3GATMA1 Discrete Semiconductor Products

Infineon Technologies
BSC077N12NS3GATMA1 HongDa Electronics BSC077N12NS3GATMA1
  • Manufacturer Part# BSC077N12NS3GATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 120V 98A 8TDSON
  • More DetailN-Channel 120V 13.4A (Ta), 98A (Tc) 139W (Tc) Surf...
In Stock: 1000

Can ship immediately

Datasheet:
BSC077N12NS3GATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 110µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TDSON-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):139W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:5700pF @ 60V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:88nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:7.7 mOhm @ 50A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:13.4A (Ta), 98A (Tc)
  • Drain to Source Voltage (Vdss):120V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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